BC237BRL1
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- Mfr.Part #
- BC237BRL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92
- Stock
- 5,994
- In Stock ：
- 5,994
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 200MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1W
- Published :
- 2007
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Base Part Number :
- BC237
- Radiation Hardening :
- No
- Transition Frequency :
- 200MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Current Rating :
- 100mA
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- hFE Min :
- 200
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Surface Mount :
- No
- Frequency :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Additional Feature :
- EUROPEAN PART NUMBER
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Voltage - Rated DC :
- 45V
- JESD-609 Code :
- e1
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Contact Plating :
- Copper, Silver, Tin
- Current - Collector Cutoff (Max) :
- 15nA
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC237BRL1
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC237BRL1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC237BRL1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC237BRL1G Applications
There are a lot of ON Semiconductor
BC237BRL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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