BC237BG
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- Mfr.Part #
- BC237BG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A TO92
- Stock
- 5,647
- In Stock ：
- 5,647
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 45V
- Transition Frequency :
- 200MHz
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- Base Part Number :
- BC237
- Frequency :
- 200MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Length :
- 5.2mm
- hFE Min :
- 200
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 200mV
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 100mA
- Contact Plating :
- Copper, Silver, Tin
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 15nA
- Max Power Dissipation :
- 1W
- Power Dissipation :
- 350mW
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Published :
- 2007
- Gain Bandwidth Product :
- 200MHz
- Width :
- 4.19mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Weight :
- 4.535924g
- Current Rating :
- 100mA
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Height :
- 5.33mm
- Number of Pins :
- 3
- Datasheets
- BC237BG
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC237BG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC237BG Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC237BG Applications
There are a lot of ON Semiconductor
BC237BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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