BC214_J35Z
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- Mfr.Part #
- BC214_J35Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A TO92-3
- Stock
- 3,538
- In Stock ：
- 3,538
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power - Max :
- 625mW
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-92-3
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- PNP
- Frequency - Transition :
- 200MHz
- Base Part Number :
- BC214
- Current - Collector (Ic) (Max) :
- 500mA
- Packaging :
- Bulk
- Datasheets
- BC214_J35Z
PNP -55°C~150°C TJ 15nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
BC214_J35Z Overview
In this device, the DC current gain is 140 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Product comes in the supplier's device package TO-92-3.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
BC214_J35Z Features
the DC current gain for this device is 140 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3
BC214_J35Z Applications
There are a lot of ON Semiconductor
BC214_J35Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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