BC213L_J35Z
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- Mfr.Part #
- BC213L_J35Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A TO92-3
- Stock
- 13,511
- In Stock ：
- 13,511
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Current - Collector (Ic) (Max) :
- 500mA
- Packaging :
- Bulk
- Supplier Device Package :
- TO-92-3
- Base Part Number :
- BC213
- Frequency - Transition :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 2mA 5V
- Transistor Type :
- PNP
- Power - Max :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Datasheets
- BC213L_J35Z
PNP -55°C~150°C TJ 15nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
BC213L_J35Z Overview
In this device, the DC current gain is 80 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Product comes in the supplier's device package TO-92-3.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
BC213L_J35Z Features
the DC current gain for this device is 80 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3
BC213L_J35Z Applications
There are a lot of ON Semiconductor
BC213L_J35Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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