BC212BRL1G
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- Mfr.Part #
- BC212BRL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A TO92
- Stock
- 25,428
- In Stock ：
- 25,428
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- -50V
- Max Power Dissipation :
- 350mW
- Qualification Status :
- Not Qualified
- hFE Min :
- 40
- Gain Bandwidth Product :
- 280MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -250mV
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 50V
- Base Part Number :
- BC212
- Max Collector Current :
- 100mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Base Voltage (VCBO) :
- -60V
- Current Rating :
- -100mA
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Additional Feature :
- EUROPEAN PART NUMBER
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Frequency :
- 280MHz
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 600mV
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2mA 5V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Type :
- PNP
- Power Dissipation :
- 350mW
- Transition Frequency :
- 280MHz
- Datasheets
- BC212BRL1G
BC212BRL1G Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC212BRL1G Overview
DC current gain in this device equals 60 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 280MHz.In extreme cases, the collector current can be as low as 100mA volts.
BC212BRL1G Features
the DC current gain for this device is 60 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz
BC212BRL1G Applications
There are a lot of ON Semiconductor
BC212BRL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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