BC212BRL1
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- Mfr.Part #
- BC212BRL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A TO92
- Stock
- 46,639
- In Stock ：
- 46,639
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -50V
- Transition Frequency :
- 280MHz
- Pbfree Code :
- No
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 350mW
- Collector Emitter Saturation Voltage :
- -250mV
- Collector Emitter Voltage (VCEO) :
- 600mV
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 240
- Power Dissipation :
- 350mW
- Current Rating :
- -100mA
- RoHS Status :
- Non-RoHS Compliant
- Lead Free :
- Contains Lead
- Base Part Number :
- BC212
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- Published :
- 2005
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2mA 5V
- Additional Feature :
- EUROPEAN PART NUMBER
- Gain Bandwidth Product :
- 280MHz
- Frequency :
- 280MHz
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Base Voltage (VCBO) :
- -60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 40
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- JESD-609 Code :
- e0
- Polarity/Channel Type :
- PNP
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 100mA
- Datasheets
- BC212BRL1
BC212BRL1 Documents
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC212BRL1 Overview
This device has a DC current gain of 60 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 280MHz.A maximum collector current of 100mA volts is possible.
BC212BRL1 Features
the DC current gain for this device is 60 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz
BC212BRL1 Applications
There are a lot of ON Semiconductor
BC212BRL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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