BC212BG
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- Mfr.Part #
- BC212BG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A TO92
- Stock
- 9,079
- In Stock ：
- 9,079
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Power Dissipation :
- 350mW
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 350mW
- Qualification Status :
- Not Qualified
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- hFE Min :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- -100mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Copper, Silver, Tin
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 280MHz
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2mA 5V
- Transition Frequency :
- 280MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- -50V
- Collector Emitter Saturation Voltage :
- -250mV
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Bulk
- Number of Terminations :
- 3
- Published :
- 2005
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 280MHz
- Pin Count :
- 3
- Base Part Number :
- BC212
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins :
- 3
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 100mA
- Pbfree Code :
- yes
- Current Rating :
- -100mA
- Datasheets
- BC212BG
BC212BG Documents
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC212BG Overview
In this device, the DC current gain is 60 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Maintaining the continuous collector voltage at -100mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).280MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC212BG Features
the DC current gain for this device is 60 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz
BC212BG Applications
There are a lot of ON Semiconductor
BC212BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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