BAP51-05W,115

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Mfr.Part #
BAP51-05W,115
Manufacturer
NXP Semiconductors
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
RF DIODE PIN 50V 240MW SOT323-3
Stock
6,930
In Stock :
6,930

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Manufacturer :
NXP Semiconductors
Product Category :
Diodes - RF
Base Part Number :
BAP51-05
Qualification Status :
Not Qualified
Diode Capacitance-Max :
0.55pF
Number of Elements :
2
Surface Mount :
yes
HTS Code :
8541.10.00.70
Package / Case :
SC-70, SOT-323
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
240mW
Terminal Finish :
Tin (Sn)
Minority Carrier Lifetime-Nom :
0.55 µs
Breakdown Voltage-Min :
50V
Packaging :
Tape and Reel (TR)
Voltage - Peak Reverse (Max) :
50V
Current - Max :
50mA
JESD-30 Code :
R-PDSO-G3
Diode Capacitance-Nom :
0.4pF
Diode Res Test Frequency :
100MHz
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
Diode Res Test Current :
0.5mA
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
260
Terminal Position :
Dual
Capacitance @ Vr, F :
0.35pF @ 5V 1MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Diode Type :
PIN - 1 Pair Series Connection
Resistance @ If, F :
2.5Ohm @ 10mA 100MHz
Factory Lead Time :
13 Weeks
Configuration :
COMMON CATHODE, 2 ELEMENTS
Number of Terminations :
3
Operating Temperature :
-65°C~150°C TJ
Diode Element Material :
SILICON
Pin Count :
3
Datasheets
BAP51-05W,115
Introducing Diodes - RF NXP Semiconductors BAP51-05W,115 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BAP51-05, Package / Case:SC-70, SOT-323, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, BAP51-05W,115 pinout, BAP51-05W,115 datasheet PDF, BAP51-05W,115 amp .Beyond Diodes - RF NXP Semiconductors BAP51-05W,115 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BAP51-05W,115


PIN - 1 Pair Series Connection 0.35pF @ 5V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-70, SOT-323

BAP51-05W,115 Overview


The maximum current of this device is 50mA.This device operates at a maximum reverse voltage of 50V in accordance with its applicable specifications.This device may operate at its lowest breakdown voltage of 50V on occasion.

BAP51-05W,115 Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V


BAP51-05W,115 Applications


There are a lot of NXP USA Inc.
BAP51-05W,115 applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors
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