BAP50-04,215
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- Mfr.Part #
- BAP50-04,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- RF DIODE PIN 50V 250MW TO236AB
- Stock
- 2,233
- In Stock ：
- 2,233
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Diodes - RF
- Resistance @ If, F :
- 5Ohm @ 10mA 100MHz
- Diode Type :
- PIN - 1 Pair Series Connection
- Current - Max :
- 50mA
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Configuration :
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
- JESD-30 Code :
- R-PDSO-G3
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Published :
- 1999
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Power Dissipation-Max :
- 250mW
- Base Part Number :
- BAP50-04
- Diode Res Test Current :
- 0.5mA
- Diode Capacitance-Max :
- 0.6pF
- Minority Carrier Lifetime-Nom :
- 1.05 µs
- Number of Elements :
- 2
- Terminal Form :
- Gull wing
- Diode Res Test Frequency :
- 100MHz
- Voltage - Peak Reverse (Max) :
- 50V
- Operating Temperature :
- -65°C~150°C TJ
- Diode Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JEDEC-95 Code :
- TO-236AB
- Capacitance @ Vr, F :
- 0.5pF @ 5V 1MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- HTS Code :
- 8541.10.00.70
- Peak Reflow Temperature (Cel) :
- 260
- Breakdown Voltage-Min :
- 50V
- Diode Forward Resistance-Max :
- 5Ohm
- Diode Capacitance-Nom :
- 0.45pF
- Datasheets
- BAP50-04,215
BAP50-04,215 Documents
PIN - 1 Pair Series Connection 0.5pF @ 5V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3
BAP50-04,215 Overview
A maximum current of 50mA is required to operate this device.This device operates at a maximum peak reverse voltage of 50V according to its specifications.The breakdown voltage of this device may occasionally be as low as 50V.
BAP50-04,215 Features
from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V
BAP50-04,215 Applications
There are a lot of NXP USA Inc.
BAP50-04,215 applications of RF diodes.
- Telematic systems
- Compensators
- Radar systems for industrial use
- Ultra high-speed switching
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
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