BAP50-03,115

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Mfr.Part #
BAP50-03,115
Manufacturer
NXP Semiconductors
Package / Case
SC-76, SOD-323
Datasheet
Download
Description
RF DIODE PIN 50V 500MW SOD323
Stock
11,275
In Stock :
11,275

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Manufacturer :
NXP Semiconductors
Product Category :
Diodes - RF
Diode Res Test Current :
0.5mA
Qualification Status :
Not Qualified
Voltage - Peak Reverse (Max) :
50V
HTS Code :
8541.10.00.70
Terminal Finish :
Tin (Sn)
Terminal Position :
Dual
JESD-30 Code :
R-PDSO-G2
Diode Capacitance-Nom :
0.55pF
Packaging :
Tape and Reel (TR)
Capacitance @ Vr, F :
0.35pF @ 5V 1MHz
Factory Lead Time :
8 Weeks
Surface Mount :
yes
Resistance @ If, F :
5Ohm @ 10mA 100MHz
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
1999
Diode Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Base Part Number :
BAP50
Diode Capacitance-Max :
0.55pF
Diode Res Test Frequency :
100MHz
Breakdown Voltage-Min :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Diode Type :
PIN - Single
JESD-609 Code :
e3
Package / Case :
SC-76, SOD-323
Operating Temperature :
-65°C~150°C TJ
Number of Terminations :
2
Power Dissipation-Max :
500mW
Terminal Form :
Gull wing
Diode Forward Resistance-Max :
5Ohm
Reverse Test Voltage :
1V
Pin Count :
2
RoHS Status :
ROHS3 Compliant
Current - Max :
50mA
Introducing Diodes - RF NXP Semiconductors BAP50-03,115 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BAP50, Package / Case:SC-76, SOD-323, Operating Temperature:-65°C~150°C TJ, Number of Terminations:2, BAP50-03,115 pinout, BAP50-03,115 datasheet PDF, BAP50-03,115 amp .Beyond Diodes - RF NXP Semiconductors BAP50-03,115 ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BAP50-03,115


PIN - Single 0.35pF @ 5V 1MHz -65°C~150°C TJ 2 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-76, SOD-323

BAP50-03,115 Overview


Operating from 50mA is the maximum current for this device.The maximum peak reverse voltage for this device is 50V, according to the applicable device specifications.There may be times when this device runs at its lowest possible breakdown voltage, which is 50V.Valid conversion results require a reverse test voltage within 1V.

BAP50-03,115 Features


from a maximum current of 50mA volts
at its lowest breakdown voltage of 50V


BAP50-03,115 Applications


There are a lot of NXP USA Inc.
BAP50-03,115 applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
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