BA12004BF-E2

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

620mW

Transistor Type :

7 NPN Darlington

Collector Emitter Voltage (VCEO) :

1.6V

Collector Emitter Breakdown Voltage :

60V

Operating Temperature :

-40°C~85°C TA

Factory Lead Time :

10 Weeks

RoHS Status :

ROHS3 Compliant

Published :

2014

Max Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 350mA 2V

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 500μA, 350mA

Number of Pins :

16

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

16-SOIC (0.173, 4.40mm Width)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Breakdown Voltage :

60V

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Power - Max :

620mW