AUIRL3705Z

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

26 ns

Published :

2010

Drain-source On Resistance-Max :

0.008Ohm

Mount :

Through Hole

Drain to Source Breakdown Voltage :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

130W Tc

Vgs (Max) :

±16V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Mounting Type :

Through Hole

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Rise Time :

240ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

8m Ω @ 52A, 10V

Power Dissipation :

130W

JEDEC-95 Code :

TO-220AB

Width :

4.83mm

Factory Lead Time :

16 Weeks

Length :

10.67mm

Element Configuration :

Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

83 ns

Height :

9.02mm

Packaging :

Tube

Transistor Application :

SWITCHING

Number of Terminations :

3

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

16V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2880pF @ 25V

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Radiation Hardening :

No

Continuous Drain Current (ID) :

75A

Turn On Delay Time :

17 ns

Number of Elements :

1

ECCN Code :

EAR99

Number of Pins :

3