AUIRGU4045D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Packaging :

Tube

JESD-609 Code :

e3

ECCN Code :

EAR99

Gate Charge :

19.5nC

Switching Energy :

56μJ (on), 122μJ (off)

Input Type :

Standard

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Published :

2011

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 6A

Configuration :

SINGLE WITH BUILT-IN DIODE

Reverse Recovery Time :

74ns

Gate-Emitter Thr Voltage-Max :

6.5V

Voltage - Collector Emitter Breakdown (Max) :

600V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

POWER CONTROL

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

18A

Reach Compliance Code :

Compliant

Factory Lead Time :

13 Weeks

Gate-Emitter Voltage-Max :

20V

Td (on/off) @ 25°C :

27ns/75ns

Turn Off Time-Nom (toff) :

127 ns

Power Dissipation-Max (Abs) :

77W

Peak Reflow Temperature (Cel) :

260

Power - Max :

77W

Terminal Position :

Single

Test Condition :

400V, 6A, 47 Ω, 15V

Turn On Time :

38 ns

Surface Mount :

No

IGBT Type :

Trench

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Fall Time-Max (tf) :

22ns

Current - Collector (Ic) (Max) :

12A

Rise Time-Max :

15ns