AUIRGP4066D1-E
- Mfr.Part #
- AUIRGP4066D1-E
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 140A 454W TO-247AC
- Stock
- 2,305
- In Stock :
- 2,305
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Reverse Recovery Time :
- 240ns
- IGBT Type :
- Trench
- Transistor Application :
- POWER CONTROL
- JEDEC-95 Code :
- TO-247AD
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 75A
- REACH SVHC :
- No SVHC
- Test Condition :
- 400V, 75A, 10 Ω, 15V
- Element Configuration :
- Single
- Width :
- 5.13mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- 4.24mJ (on), 2.17mJ (off)
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Collector Emitter Breakdown Voltage :
- 600V
- Length :
- 15.87mm
- Gate Charge :
- 225nC
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Collector Emitter Saturation Voltage :
- 1.7V
- Input Type :
- Standard
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 200 ns
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Packaging :
- Tube
- Turn Off Time-Nom (toff) :
- 320 ns
- Max Collector Current :
- 140A
- Case Connection :
- COLLECTOR
- Current - Collector Pulsed (Icm) :
- 225A
- Max Power Dissipation :
- 454W
- Height :
- 20.7mm
- Factory Lead Time :
- 25 Weeks
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Td (on/off) @ 25°C :
- 50ns/200ns
- Turn On Delay Time :
- 50 ns
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Rise Time-Max :
- 100ns
- Power Dissipation :
- 454W
- Turn On Time :
- 115 ns
- Published :
- 2012
- Gate-Emitter Voltage-Max :
- 20V
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Fall Time-Max (tf) :
- 80ns
- Datasheets
- AUIRGP4066D1-E

AUIRGP4066D1-E datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
AUIRGP4066D1-E Description
The AUIRGP4066D1-E is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon AUIRGP4066D1-E provides high efficiency in a wide range of applications, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. The transistor AUIRGP4066D1-E is suitable for a wide range of frequencies due to Low VcE (ON) and Low Switching losses. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor AUIRGP4066D1-E is in the TO-247AD package with 454w Power Dissipation.
AUIRGP4066D1-E Features
Low VcE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175°C
5μS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VcE (ON) Temperature Coefficient
Soft Recovery Co-Pak Diode
Tight parameter distribution
Lead-Free, RoHS Compliant
Automotive Qualified
AUIRGP4066D1-E Applications
Industrial
Pro audio, video & signage
Enterprise systems
Datacenter & enterprise computing
Personal electronics
Tablets
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