AUIRGP4062D-E

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Case Connection :

COLLECTOR

Polarity/Channel Type :

N-Channel

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

72A

Switching Energy :

115μJ (on), 600μJ (off)

Turn On Delay Time :

40 ns

ECCN Code :

EAR99

Gate-Emitter Thr Voltage-Max :

6.5V

Element Configuration :

Single

Turn On Time :

64 ns

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Length :

15.87mm

Fall Time-Max (tf) :

41ns

REACH SVHC :

No SVHC

Number of Elements :

1

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

20V

Number of Pins :

3

Power Dissipation :

250W

JEDEC-95 Code :

TO-247AD

Td (on/off) @ 25°C :

41ns/104ns

Reverse Recovery Time :

89ns

Max Collector Current :

48A

Mount :

Through Hole

Turn-Off Delay Time :

104 ns

Height :

20.7mm

Published :

2011

Max Power Dissipation :

250W

Package / Case :

TO-247-3

Lead Free :

Lead Free

Turn Off Time-Nom (toff) :

164 ns

Collector Emitter Saturation Voltage :

1.95V

Factory Lead Time :

16 Weeks

Radiation Hardening :

No

Test Condition :

400V, 24A, 10 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Gate Charge :

50nC

Width :

5.31mm

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Voltage (VCEO) :

600V

Vce(on) (Max) @ Vge, Ic :

1.95V @ 15V, 24A

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V