AUIRG4PH50S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn On Time :

62 ns

Polarity/Channel Type :

N-Channel

Switching Energy :

1.8mJ (on), 19.6mJ (off)

Gate-Emitter Thr Voltage-Max :

6V

Length :

15.87mm

Max Collector Current :

57A

Gate-Emitter Voltage-Max :

20V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Case Connection :

COLLECTOR

Number of Terminations :

3

Voltage - Collector Emitter Breakdown (Max) :

1200V

Collector Emitter Saturation Voltage :

1.7V

Input Type :

Standard

Test Condition :

960V, 33A, 5 Ω, 15V

Gate Charge :

167nC

Max Power Dissipation :

200W

Radiation Hardening :

No

Factory Lead Time :

9 Weeks

Collector Emitter Breakdown Voltage :

1.2kV

Element Configuration :

Single

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

1.7V

Number of Pins :

3

Current - Collector Pulsed (Icm) :

114A

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 33A

Td (on/off) @ 25°C :

32ns/845ns

Published :

2007

Package / Case :

TO-247-3

Turn Off Time-Nom (toff) :

2170 ns

ECCN Code :

EAR99

Power Dissipation :

200W

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Height :

20.7mm

Number of Elements :

1

Width :

5.3086mm

JEDEC-95 Code :

TO-247AC