AUIRG4BC30S-S

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Mfr.Part #
AUIRG4BC30S-S
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
AUIRG4B30 - AUTOMOTIVE IGBT DISC
Stock
19,755
In Stock :
19,755

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Polarity/Channel Type :
N-Channel
Collector Emitter Breakdown Voltage :
600V
Transistor Element Material :
SILICON
Contact Plating :
Tin
Max Collector Current :
34A
Number of Elements :
1
Transistor Application :
POWER CONTROL
Time@Peak Reflow Temperature-Max (s) :
30
Height :
4.83mm
Vce(on) (Max) @ Vge, Ic :
1.6V @ 15V, 18A
Turn On Time :
40 ns
RoHS Status :
ROHS3 Compliant
Width :
9.65mm
Collector Emitter Voltage (VCEO) :
1.6V
Gate Charge :
50nC
Gate-Emitter Voltage-Max :
20V
Element Configuration :
Single
Packaging :
Tube
Mount :
Surface Mount
Td (on/off) @ 25°C :
22ns/540ns
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Factory Lead Time :
9 Weeks
Current - Collector Pulsed (Icm) :
68A
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
100W
Input Type :
Standard
Case Connection :
COLLECTOR
Terminal Form :
Gull wing
Test Condition :
480V, 18A, 23 Ω, 15V
Max Power Dissipation :
100W
Number of Terminations :
2
Collector Emitter Saturation Voltage :
1.6V
Lead Free :
Lead Free
Length :
10.67mm
JESD-30 Code :
R-PSSO-G2
JESD-609 Code :
e3
Switching Energy :
260μJ (on), 3.45mJ (off)
ECCN Code :
EAR99
Radiation Hardening :
No
Published :
2010
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Turn Off Time-Nom (toff) :
1550 ns
Gate-Emitter Thr Voltage-Max :
6V
REACH SVHC :
No SVHC
Fall Time-Max (tf) :
590ns
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
260
Datasheets
AUIRG4BC30S-S
Introducing Transistors - IGBTs - Single International Rectifier AUIRG4BC30S-S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, AUIRG4BC30S-S pinout, AUIRG4BC30S-S datasheet PDF, AUIRG4BC30S-S amp .Beyond Transistors - IGBTs - Single International Rectifier AUIRG4BC30S-S ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



AUIRG4BC30S-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

AUIRG4BC30S-S Description

 

AUIRG4BC30S-S transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AUIRG4BC30S-S MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies AUIRG4BC30S-S has the common source configuration.

 

 

AUIRG4BC30S-S Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AUIRG4BC30S-S Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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