AUIRG4BC30S-S
- Mfr.Part #
- AUIRG4BC30S-S
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- AUIRG4B30 - AUTOMOTIVE IGBT DISC
- Stock
- 19,755
- In Stock :
- 19,755
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Polarity/Channel Type :
- N-Channel
- Collector Emitter Breakdown Voltage :
- 600V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Max Collector Current :
- 34A
- Number of Elements :
- 1
- Transistor Application :
- POWER CONTROL
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height :
- 4.83mm
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 18A
- Turn On Time :
- 40 ns
- RoHS Status :
- ROHS3 Compliant
- Width :
- 9.65mm
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Gate Charge :
- 50nC
- Gate-Emitter Voltage-Max :
- 20V
- Element Configuration :
- Single
- Packaging :
- Tube
- Mount :
- Surface Mount
- Td (on/off) @ 25°C :
- 22ns/540ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Factory Lead Time :
- 9 Weeks
- Current - Collector Pulsed (Icm) :
- 68A
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 100W
- Input Type :
- Standard
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- Test Condition :
- 480V, 18A, 23 Ω, 15V
- Max Power Dissipation :
- 100W
- Number of Terminations :
- 2
- Collector Emitter Saturation Voltage :
- 1.6V
- Lead Free :
- Lead Free
- Length :
- 10.67mm
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Switching Energy :
- 260μJ (on), 3.45mJ (off)
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Published :
- 2010
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Turn Off Time-Nom (toff) :
- 1550 ns
- Gate-Emitter Thr Voltage-Max :
- 6V
- REACH SVHC :
- No SVHC
- Fall Time-Max (tf) :
- 590ns
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- AUIRG4BC30S-S
AUIRG4BC30S-S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
AUIRG4BC30S-S Description
AUIRG4BC30S-S transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AUIRG4BC30S-S MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies AUIRG4BC30S-S has the common source configuration.
AUIRG4BC30S-S Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
AUIRG4BC30S-S Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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