AUIRFN8459TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

6

Additional Feature :

ULTRA LOW RESISTANCE

Transistor Application :

SWITCHING

Resistance :

4.8mOhm

Mount :

Surface Mount

Terminal Form :

Flat

Element Configuration :

Dual

Number of Elements :

2

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Reference Standard :

AEC-Q101

Published :

2014

Number of Channels :

2

Mounting Type :

Surface Mount

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

40V

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

11 Weeks

Turn-Off Delay Time :

25 ns

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Max Power Dissipation :

50W

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F6

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2250pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

55ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

66 mJ

Case Connection :

DRAIN

Series :

HEXFET®

Fall Time (Typ) :

42 ns

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 40A, 10V

Continuous Drain Current (ID) :

50A

Vgs(th) (Max) @ Id :

3.9V @ 50µA

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE