AUIRF7343Q

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

72 mJ

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

55V

Terminal Position :

Dual

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pulsed Drain Current-Max (IDM) :

38A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Terminal Form :

Gull wing

Power - Max :

2W

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.7A 3.4A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

JEDEC-95 Code :

MS-012AA

DS Breakdown Voltage-Min :

55V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.05Ohm

RoHS Status :

RoHS Compliant

Number of Elements :

2

Surface Mount :

yes

Published :

1999

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.7A, 10V

ECCN Code :

EAR99

Series :

HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

740pF @ 25V

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

4.7A

FET Type :

N and P-Channel

HTS Code :

8541.29.00.95

Qualification Status :

Not Qualified