AUIRF7341QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

4mm

Length :

5mm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Fall Time (Typ) :

12.5 ns

Element Configuration :

Dual

Continuous Drain Current (ID) :

5.1A

Rds On (Max) @ Id, Vgs :

50m Ω @ 5.1A, 10V

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Height :

1.5mm

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, HEXFET®

Threshold Voltage :

1V

Avalanche Energy Rating (Eas) :

140 mJ

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Rise Time :

7.7ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Number of Terminations :

8

Turn On Delay Time :

9.2 ns

Published :

2011

Number of Elements :

2

Drain to Source Breakdown Voltage :

55V

Max Power Dissipation :

2.4W

Power Dissipation :

2.4W

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.05Ohm

Mount :

Surface Mount

FET Type :

2 N-Channel (Dual)

REACH SVHC :

No SVHC

Turn-Off Delay Time :

31 ns

Number of Pins :

8

Transistor Element Material :

SILICON

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)