AUIRF7316QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

140 mJ

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

-30V

Radiation Hardening :

No

Height :

1.5mm

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2W

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Number of Pins :

8

Published :

2011

FET Type :

2 P-Channel (Dual)

Width :

4mm

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

2

Power Dissipation :

2W

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

-1V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Fall Time (Typ) :

32 ns

Continuous Drain Current (ID) :

-4.9A

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.9A, 10V

Pulsed Drain Current-Max (IDM) :

30A

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

34 ns

Series :

HEXFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Terminations :

8

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Rise Time :

13ns

Turn On Delay Time :

13 ns