AUIRF7316Q

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Published :

2014

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

140 mJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.058Ohm

Pulsed Drain Current-Max (IDM) :

30A

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.9A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Elements :

2

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Power - Max :

2W

Number of Terminations :

8

Series :

HEXFET®

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tube

Reach Compliance Code :

Compliant

JEDEC-95 Code :

MS-012AA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 P-Channel (Dual)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA