AUIRF7313QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Threshold Voltage :

3V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

3.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

2.4W

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

29m Ω @ 6.9A, 10V

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

6.9A

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

2.4W

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

11 ns

Reference Standard :

AEC-Q101

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

21 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Number of Terminations :

8

Published :

2011

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

755pF @ 25V

Factory Lead Time :

8 Weeks

Number of Elements :

2

REACH SVHC :

No SVHC

Rise Time :

7.3ns

Radiation Hardening :

No

Number of Pins :

8

Avalanche Energy Rating (Eas) :

450 mJ

Terminal Form :

Gull wing