AUIRF7303QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

5.3A

RoHS Status :

RoHS Compliant

Height :

1.5mm

Drain-source On Resistance-Max :

0.05Ohm

Factory Lead Time :

26 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

515pF @ 25V

Rise Time :

6.2ns

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

4.9A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.7A, 10V

Max Power Dissipation :

2.4W

Additional Feature :

High Reliability

Turn-Off Delay Time :

15 ns

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Width :

4mm

Power Dissipation :

2W

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

2.9 ns

Operating Temperature :

-55°C~175°C TJ

Length :

5mm

REACH SVHC :

No SVHC

Series :

HEXFET®

Transistor Application :

SWITCHING

Number of Pins :

8

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

Nominal Vgs :

1 V

Threshold Voltage :

1V

Terminal Form :

Gull wing

Fall Time (Typ) :

7.8 ns

Vgs(th) (Max) @ Id :

3V @ 100μA

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Element Configuration :

Dual