AUIRF7303QTR

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

5.3A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

High Reliability

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Length :

5mm

Width :

4mm

Radiation Hardening :

No

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.05Ohm

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3V @ 100μA

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Rise Time :

6.2ns

Factory Lead Time :

26 Weeks

Threshold Voltage :

1V

Nominal Vgs :

1 V

Drain Current-Max (Abs) (ID) :

4.9A

FET Type :

2 N-Channel (Dual)

Series :

HEXFET®

Max Power Dissipation :

2.4W

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Elements :

2

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

8

Height :

1.5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

2.9 ns

Published :

2011

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.7A, 10V

Terminal Form :

Gull wing

Fall Time (Typ) :

7.8 ns

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

15 ns

REACH SVHC :

No SVHC

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

515pF @ 25V