AUIRF7103QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

5.1 ns

Turn-Off Delay Time :

15 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Drain to Source Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

3A

Max Power Dissipation :

2.4W

Lead Free :

Lead Free

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Rise Time :

1.7ns

Length :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Width :

4mm

Series :

Automotive, AEC-Q101, HEXFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.5mm

Number of Terminations :

8

Power Dissipation :

2.4W

Threshold Voltage :

1V

Published :

2009

Fall Time (Typ) :

2.3 ns

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

130m Ω @ 3A, 10V

Drain Current-Max (Abs) (ID) :

3A

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.13Ohm

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Number of Elements :

2

Factory Lead Time :

26 Weeks

JESD-609 Code :

e3

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

50V

FET Feature :

Standard

Terminal Finish :

Matte Tin (Sn)