AUIRF3205

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Mfr.Part #
AUIRF3205
Manufacturer
International Rectifier
Package / Case
TO-220-3
Datasheet
Download
Description
AUIRF3205 - 55V-60V N-CHANNEL AU
Stock
27,615
In Stock :
27,615

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~175°C TJ
Width :
4.83mm
Package / Case :
TO-220-3
Number of Elements :
1
Number of Pins :
3
Height :
9.02mm
REACH SVHC :
No SVHC
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
55V
Power Dissipation :
200W
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
75A
Radiation Hardening :
No
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
8m Ω @ 62A, 10V
Rise Time :
101ns
Gate Charge (Qg) (Max) @ Vgs :
146nC @ 10V
Power Dissipation-Max :
200W Tc
Mount :
Through Hole
Vgs (Max) :
±20V
Length :
10.67mm
Element Configuration :
Single
Mounting Type :
Through Hole
Turn On Delay Time :
14 ns
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3247pF @ 25V
Fall Time (Typ) :
65 ns
Factory Lead Time :
16 Weeks
Packaging :
Tube
Series :
HEXFET®
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
50 ns
Threshold Voltage :
2V
Published :
2011
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
AUIRF3205
Introducing Transistors - FETs, MOSFETs - Single International Rectifier AUIRF3205 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, AUIRF3205 pinout, AUIRF3205 datasheet PDF, AUIRF3205 amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier AUIRF3205 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier AUIRF3205


N-Channel Tube 8m Ω @ 62A, 10V ±20V 3247pF @ 25V 146nC @ 10V TO-220-3

AUIRF3205 Description


This Stripe Planar design of HEXFET? Power MOSFETs, specifically created for Automotive applications, makes use of cutting-edge processing processes to provide low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.



AUIRF3205 Features


  • Continuous Drain Current (ID): 75A

  • Gate to Source Voltage (Vgs): 20V

  • Drain to Source Breakdown Voltage: 55V

  • Threshold Voltage: 2V



AUIRF3205 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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