ATF-551M4-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Gain :

17.5dB

Nominal Supply Current :

10mA

Number of Terminations :

4

Radiation Hardening :

No

Terminal Finish :

Gold (Au)

JESD-609 Code :

e4

Transistor Type :

pHEMT FET

Frequency :

2GHz

Transistor Application :

AMPLIFIER

Packaging :

Bulk

Operating Mode :

Depletion Mode

Max Operating Temperature :

150°C

Factory Lead Time :

7 Weeks

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-65°C

Configuration :

Single

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Elements :

1

FET Technology :

HIGH ELECTRON MOBILITY

Published :

2003

Current Rating :

100mA

Gate to Source Voltage (Vgs) :

1V

Terminal Position :

BOTTOM

Power - Output :

14.6dBm

Voltage - Rated DC :

2.7V

Drain Current-Max (Abs) (ID) :

0.1A

Continuous Drain Current (ID) :

100mA

Noise Figure :

0.5dB

DS Breakdown Voltage-Min :

5V

Base Part Number :

ATF-551M4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Peak Reflow Temperature (Cel) :

260

Package / Case :

0505 (1412 Metric)

Power Dissipation :

270mW

Max Power Dissipation :

270mW

Drain to Source Voltage (Vdss) :

2.7V

Lead Free :

Lead Free