ATF-55143-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Frequency :

2GHz

Drain to Source Voltage (Vdss) :

2.7V

Factory Lead Time :

6 Weeks

Drain Current-Max (Abs) (ID) :

0.1A

Qualification Status :

Not Qualified

FET Technology :

HIGH ELECTRON MOBILITY

ECCN Code :

EAR99

Max Power Dissipation :

270mW

Contact Plating :

Tin

Current Rating :

100mA

Power Dissipation :

270mW

Noise Figure :

0.6dB

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

100mA

Max Operating Temperature :

150°C

Transistor Type :

E-pHEMT

DS Breakdown Voltage-Min :

5V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Case Connection :

SOURCE

Gain :

17.7dB

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

1V

Min Operating Temperature :

-65°C

Published :

2012

Voltage - Rated DC :

2.7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Number of Pins :

4

Package / Case :

SC-82A, SOT-343

Base Part Number :

ATF-55143

Power - Output :

14.4dBm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Terminations :

4

Number of Elements :

1

Terminal Form :

Gull wing

Current - Test :

10mA