ATF-541M4-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

FET Technology :

HIGH ELECTRON MOBILITY

Configuration :

Single

Continuous Drain Current (ID) :

120mA

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

5V

Power - Output :

21.4dBm

Power Dissipation :

360mW

Current Rating :

120mA

Terminal Finish :

Gold

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.12A

Transistor Type :

pHEMT FET

Voltage - Rated DC :

3V

JESD-609 Code :

e4

Gain :

17.5dB

Min Operating Temperature :

-65°C

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Noise Figure :

0.5dB

Qualification Status :

Not Qualified

Additional Feature :

LOW NOISE

Max Power Dissipation :

360mW

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

N-Channel

Number of Pins :

4

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Frequency :

2GHz

Number of Elements :

1

Factory Lead Time :

7 Weeks

Drain to Source Voltage (Vdss) :

3V

Current - Test :

60mA

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

1V

Base Part Number :

ATF-541M4

Terminal Position :

BOTTOM

Number of Terminations :

4

Package / Case :

0505 (1412 Metric)

Operating Mode :

ENHANCEMENT MODE