ATF-531P8-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Configuration :

Single

Number of Pins :

8

Number of Elements :

1

Case Connection :

SOURCE

Number of Terminations :

8

Gain :

20dB

FET Technology :

HIGH ELECTRON MOBILITY

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

E-pHEMT

JESD-609 Code :

e3

Base Part Number :

ATF-531P8

Published :

2014

ECCN Code :

EAR99

Additional Feature :

LOW NOISE

Gate to Source Voltage (Vgs) :

1V

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

DS Breakdown Voltage-Min :

7V

Lead Free :

Lead Free

Min Operating Temperature :

-65°C

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.3A

Terminal Form :

NO LEAD

Frequency :

2GHz

Drain to Source Voltage (Vdss) :

4V

Current - Test :

135mA

Transistor Application :

AMPLIFIER

Max Power Dissipation :

1W

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

MO-229

Power Dissipation :

1W

Factory Lead Time :

12 Weeks

Power - Output :

24.5dBm

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Terminal Position :

Dual

Voltage - Rated DC :

4V

Current Rating :

300mA

Continuous Drain Current (ID) :

300mA

Package / Case :

8-WFDFN Exposed Pad

Noise Figure :

0.6dB