ATF-521P8-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

4.5V

Case Connection :

SOURCE

Max Power Dissipation :

1.5W

Transistor Type :

pHEMT FET

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

4.5V

Gate to Source Voltage (Vgs) :

1V

Published :

2014

Number of Elements :

1

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.5A

Continuous Drain Current (ID) :

500mA

DS Breakdown Voltage-Min :

7V

Lead Free :

Lead Free

Terminal Position :

Dual

Number of Pins :

8

Frequency :

2GHz

Package / Case :

8-WFDFN Exposed Pad

Contact Plating :

Tin

Current Rating :

500mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Additional Feature :

LOW NOISE

Number of Terminations :

8

Mount :

Surface Mount

Transistor Application :

AMPLIFIER

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Gain :

17dB

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Current - Test :

200mA

Qualification Status :

Not Qualified

Power Dissipation :

1.5W

FET Technology :

HIGH ELECTRON MOBILITY

Min Operating Temperature :

-65°C

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

MO-229

Factory Lead Time :

12 Weeks

Power - Output :

26.5dBm

Noise Figure :

1.5dB