ATF-521P8-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

ECCN Code :

EAR99

Number of Pins :

8

Power Dissipation :

1.5W

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

0.5A

Terminal Form :

NO LEAD

Factory Lead Time :

12 Weeks

Voltage - Rated DC :

4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

1V

Operating Mode :

ENHANCEMENT MODE

Frequency :

2GHz

Published :

2014

Lead Free :

Lead Free

Current - Test :

200mA

JEDEC-95 Code :

MO-229

Drain to Source Voltage (Vdss) :

4.5V

Number of Elements :

1

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

N-Channel

Package / Case :

8-WFDFN Exposed Pad

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Mount :

Surface Mount

Max Power Dissipation :

1.5W

FET Technology :

HIGH ELECTRON MOBILITY

Case Connection :

SOURCE

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

500mA

Packaging :

Tape and Reel (TR)

Additional Feature :

LOW NOISE

DS Breakdown Voltage-Min :

7V

Transistor Type :

pHEMT FET

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Gain :

17dB

Power - Output :

26.5dBm

Noise Figure :

1.5dB

Min Operating Temperature :

-65°C