ATF-521P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Current Rating :

500mA

Max Operating Temperature :

150°C

Published :

2014

Nominal Vgs :

280 mV

Terminal Position :

Dual

Voltage - Rated DC :

4.5V

JEDEC-95 Code :

MO-229

Power - Output :

26.5dBm

Power Dissipation :

1.5W

Continuous Drain Current (ID) :

500mA

Package / Case :

8-WFDFN Exposed Pad

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

4.5V

Number of Pins :

8

Radiation Hardening :

No

Current - Test :

200mA

Drain Current-Max (Abs) (ID) :

0.5A

Lead Free :

Lead Free

Transistor Type :

pHEMT FET

Max Power Dissipation :

1.5W

Noise Figure :

1.5dB

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

1V

Configuration :

Single

Case Connection :

SOURCE

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

N-Channel

Number of Terminations :

8

Min Operating Temperature :

-65°C

Gain :

17dB

Mount :

Surface Mount

Termination :

SMD/SMT

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Packaging :

Bulk

DS Breakdown Voltage-Min :

7V

Dual Supply Voltage :

4.5V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

FET Technology :

HIGH ELECTRON MOBILITY

Frequency :

2GHz