ATF-511P8-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Application :

AMPLIFIER

Current Rating :

1A

Case Connection :

SOURCE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Noise Figure :

1.4dB

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Published :

2014

Terminal Form :

NO LEAD

Factory Lead Time :

6 Weeks

Drain Current-Max (Abs) (ID) :

1A

Voltage - Rated DC :

4.5V

Min Operating Temperature :

-65°C

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

1A

DS Breakdown Voltage-Min :

7V

Number of Pins :

8

Configuration :

Single

Transistor Type :

E-pHEMT

Drain to Source Voltage (Vdss) :

4.5V

Qualification Status :

Not Qualified

Contact Plating :

Tin

Max Power Dissipation :

3W

RoHS Status :

RoHS Compliant

Number of Terminations :

8

Additional Feature :

LOW NOISE

Packaging :

Tape and Reel (TR)

Power Dissipation :

3W

Operating Mode :

ENHANCEMENT MODE

Current - Test :

200mA

Gate to Source Voltage (Vgs) :

1V

Gain :

14.8dB

Power - Output :

30dBm

Number of Elements :

1

Package / Case :

8-WFDFN Exposed Pad

Polarity/Channel Type :

N-Channel

FET Technology :

HIGH ELECTRON MOBILITY

Terminal Position :

Dual

Frequency :

2GHz

JESD-609 Code :

e3