ATF-511P8-TR2

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Contact Plating :

Tin

Package / Case :

8-WFDFN Exposed Pad

Drain Current-Max (Abs) (ID) :

1A

Transistor Type :

E-pHEMT

Max Power Dissipation :

3W

Number of Terminations :

8

FET Technology :

HIGH ELECTRON MOBILITY

Packaging :

Tape and Reel (TR)

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Gain :

14.8dB

Continuous Drain Current (ID) :

1A

Transistor Application :

AMPLIFIER

Frequency :

2GHz

Power Dissipation :

3W

Voltage - Rated DC :

4.5V

DS Breakdown Voltage-Min :

7V

Terminal Form :

NO LEAD

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-65°C

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Configuration :

Single

Power - Output :

30dBm

Current - Test :

200mA

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

1V

Drain to Source Voltage (Vdss) :

4.5V

Case Connection :

SOURCE

Additional Feature :

LOW NOISE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Number of Pins :

8

Current Rating :

1A

Noise Figure :

1.4dB

Number of Elements :

1

Terminal Position :

Dual