ATF-511P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Factory Lead Time :

6 Weeks

Drain to Source Voltage (Vdss) :

4.5V

Number of Elements :

1

Current - Test :

200mA

Mount :

Surface Mount

Noise Figure :

1.4dB

Width :

2.1mm

DS Breakdown Voltage-Min :

7V

Max Power Dissipation :

3W

Length :

2.1mm

RoHS Status :

RoHS Compliant

Terminal Form :

NO LEAD

Published :

2012

Contact Plating :

Tin

Terminal Position :

Dual

Termination :

SMD/SMT

Case Connection :

SOURCE

Drain Current-Max (Abs) (ID) :

1A

Voltage - Rated DC :

4.5V

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Nominal Vgs :

280 mV

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

1A

REACH SVHC :

No SVHC

Additional Feature :

LOW NOISE

Frequency :

2GHz

FET Technology :

HIGH ELECTRON MOBILITY

Transistor Type :

E-pHEMT

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

4.5V

Configuration :

Single

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Power - Output :

30dBm

Gain :

14.8dB

JESD-609 Code :

e3

Power Dissipation :

3W

Current Rating :

1A

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-65°C

Height :

800μm

Package / Case :

8-WFDFN Exposed Pad

ECCN Code :

EAR99