ATF-511P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Form :

NO LEAD

REACH SVHC :

No SVHC

Number of Pins :

8

Min Operating Temperature :

-65°C

Current - Test :

200mA

JESD-609 Code :

e3

Height :

800μm

Length :

2.1mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Contact Plating :

Tin

Qualification Status :

Not Qualified

Max Operating Temperature :

150°C

Package / Case :

8-WFDFN Exposed Pad

Case Connection :

SOURCE

Dual Supply Voltage :

4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

7V

Power Dissipation :

3W

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

4.5V

Width :

2.1mm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Power - Output :

30dBm

Gain :

14.8dB

Gate to Source Voltage (Vgs) :

1V

Number of Terminations :

8

Lead Free :

Lead Free

Continuous Drain Current (ID) :

1A

Nominal Vgs :

280 mV

Additional Feature :

LOW NOISE

Termination :

SMD/SMT

Published :

2012

FET Technology :

HIGH ELECTRON MOBILITY

Configuration :

Single

Packaging :

Bulk

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

4.5V

Frequency :

2GHz

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

6 Weeks

Current Rating :

1A

Mount :

Surface Mount

Transistor Type :

E-pHEMT

Drain Current-Max (Abs) (ID) :

1A

Noise Figure :

1.4dB

Max Power Dissipation :

3W

RoHS Status :

RoHS Compliant