ATF-501P8-BLK

Manufacturer :

Broadcom

Product Category :

Transistors - FETs, MOSFETs - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-65°C

REACH SVHC :

Unknown

Packaging :

Bulk

Power - Output :

29dBm

Continuous Drain Current (ID) :

1A

Factory Lead Time :

6 Weeks

Published :

2014

JEDEC-95 Code :

MO-229

Package / Case :

8-WFDFN Exposed Pad

DS Breakdown Voltage-Min :

7V

Configuration :

Single

Gain :

15dB

Case Connection :

SOURCE

Polarity/Channel Type :

N-Channel

RoHS Status :

RoHS Compliant

Noise Figure :

1dB

Contact Plating :

Tin

Number of Elements :

1

Number of Pins :

8

Transistor Type :

E-pHEMT

Power Dissipation :

3.5W

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Frequency :

2GHz

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

800mV

Drain Current-Max (Abs) (ID) :

1A

Voltage - Rated DC :

4.5V

Nominal Supply Current :

280mA

FET Technology :

HIGH ELECTRON MOBILITY

Max Power Dissipation :

3.5W

Current Rating :

1A

Drain to Source Voltage (Vdss) :

4.5V

Number of Terminations :

8

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Terminal Position :

Dual

ECCN Code :

EAR99