APTGT75DH60TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Power - Max :

250W

Max Power Dissipation :

250W

Turn On Time :

170 ns

Terminal Finish :

TIN SILVER COPPER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

POWER CONTROL

Input :

Standard

Collector Emitter Breakdown Voltage :

600V

Number of Pins :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate-Emitter Voltage-Max :

20V

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Turn Off Time-Nom (toff) :

310 ns

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~175°C TJ

JESD-609 Code :

e1

Input Capacitance (Cies) @ Vce :

4.62nF @ 25V

Package / Case :

SP4

Terminal Position :

UPPER

Transistor Element Material :

SILICON

Number of Elements :

2

Pin Count :

14

Mount :

Chassis Mount

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100A

Input Capacitance :

4.62nF

Current - Collector Cutoff (Max) :

250μA

Case Connection :

Isolated

Pbfree Code :

yes

Configuration :

Asymmetrical Bridge

Mounting Type :

Chassis Mount

NTC Thermistor :

yes

Collector Emitter Voltage (VCEO) :

1.9V

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 75A

IGBT Type :

Trench Field Stop

Number of Terminations :

14

Polarity/Channel Type :

N-Channel

Published :

2006