APTGT20DDA60T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Input Capacitance :

1.1nF

Transistor Element Material :

SILICON

Terminal Position :

UPPER

Package / Case :

SP3

Pin Count :

25

Reach Compliance Code :

Unknown

Max Power Dissipation :

62W

Gate-Emitter Voltage-Max :

20V

Number of Elements :

2

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 20A

Configuration :

Dual Boost Chopper

Number of Terminations :

25

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn Off Time-Nom (toff) :

310 ns

JESD-30 Code :

R-XUFM-X25

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Chassis Mount

IGBT Type :

Trench Field Stop

Collector Emitter Voltage (VCEO) :

1.9V

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Terminal Form :

UNSPECIFIED

Published :

2006

Input :

Standard

Number of Pins :

3

Max Collector Current :

32A

Terminal Finish :

TIN SILVER COPPER

Transistor Application :

POWER CONTROL

Mount :

Chassis Mount

Collector Emitter Breakdown Voltage :

600V

Current - Collector Cutoff (Max) :

250μA

Polarity/Channel Type :

N-Channel

Input Capacitance (Cies) @ Vce :

1.1nF @ 25V

Case Connection :

Isolated

Turn On Time :

170 ns

NTC Thermistor :

yes

Operating Temperature :

-40°C~175°C TJ

Power - Max :

62W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)