APTGT20DDA60T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Max Collector Current :

32A

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Element Configuration :

Dual

Polarity/Channel Type :

N-Channel

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

1.1nF

Case Connection :

Isolated

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 20A

Package / Case :

SP3

Operating Temperature :

-40°C~175°C TJ

Number of Elements :

2

NTC Thermistor :

yes

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Transistor Application :

POWER CONTROL

Mounting Type :

Chassis Mount

JESD-609 Code :

e1

Input Capacitance (Cies) @ Vce :

1.1nF @ 25V

Current - Collector Cutoff (Max) :

250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Collector Emitter Breakdown Voltage :

600V

Turn Off Time-Nom (toff) :

310 ns

Configuration :

Dual Boost Chopper

Input :

Standard

Terminal Finish :

TIN SILVER COPPER

Terminal Position :

UPPER

Power - Max :

62W

Pin Count :

25

Collector Emitter Voltage (VCEO) :

1.9V

Max Power Dissipation :

62W

Gate-Emitter Voltage-Max :

20V

Turn On Time :

170 ns

JESD-30 Code :

R-XUFM-X25

IGBT Type :

Trench Field Stop

Mount :

Chassis Mount

Published :

2006

Number of Terminations :

25