APTGL60DH120T3G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Input :

Standard

Input Capacitance (Cies) @ Vce :

2.77nF @ 25V

Operating Temperature :

-40°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

280W

VCEsat-Max :

2.25 V

Max Power Dissipation :

280W

Element Configuration :

Dual

Package / Case :

SP3

Mounting Type :

Chassis Mount

Collector Emitter Voltage (VCEO) :

1.2kV

Mount :

Chassis Mount, Screw

Gate-Emitter Voltage-Max :

20V

IGBT Type :

Trench Field Stop

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

1.2kV

Voltage - Collector Emitter Breakdown (Max) :

1200V

Number of Pins :

16

NTC Thermistor :

yes

Vce(on) (Max) @ Vge, Ic :

2.25V @ 15V, 50A

Input Capacitance :

2.77nF

Factory Lead Time :

22 Weeks

RoHS Status :

RoHS Compliant

Configuration :

Asymmetrical Bridge

Number of Elements :

1

Published :

2012

Max Collector Current :

80A

Current - Collector Cutoff (Max) :

250μA