APTGF660U60D4G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Input Capacitance :

36nF

Polarity/Channel Type :

N-Channel

IGBT Type :

NPT

Input Capacitance (Cies) @ Vce :

36nF @ 25V

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Voltage (VCEO) :

600V

Number of Elements :

1

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

Turn On Time :

343 ns

Number of Pins :

4

Input :

Standard

Mount :

Chassis Mount, Screw

NTC Thermistor :

No

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

JESD-609 Code :

e1

Max Power Dissipation :

2.8kW

Package / Case :

D4

Max Collector Current :

860A

Pin Count :

4

ECCN Code :

EAR99

Published :

2012

Power - Max :

2800W

Min Operating Temperature :

-40°C

Mounting Type :

Chassis Mount

Configuration :

Single

Gate-Emitter Voltage-Max :

20V

Max Operating Temperature :

150°C

Turn Off Time-Nom (toff) :

545 ns

Vce(on) (Max) @ Vge, Ic :

2.45V @ 15V, 800A

Number of Terminations :

4

Case Connection :

Isolated

Current - Collector Cutoff (Max) :

500μA

Pbfree Code :

yes

RoHS Status :

RoHS Compliant