APTGF25A120T1G

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Terminal Form :

THROUGH-HOLE

Number of Elements :

2

Current - Collector Cutoff (Max) :

250μA

Input :

Standard

Collector Emitter Breakdown Voltage :

1.2kV

Configuration :

Half Bridge

Transistor Application :

Motor Control

RoHS Status :

RoHS Compliant

Published :

2009

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 25A

Input Capacitance (Cies) @ Vce :

1.65nF @ 25V

Case Connection :

Isolated

Gate-Emitter Voltage-Max :

20V

Reach Compliance Code :

Unknown

Collector Emitter Voltage (VCEO) :

3.7V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Number of Pins :

1

Max Collector Current :

40A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Element Configuration :

Dual

Polarity/Channel Type :

N-Channel

Mount :

Chassis Mount

Turn Off Time-Nom (toff) :

386 ns

JESD-609 Code :

e1

Number of Terminations :

12

Input Capacitance :

1.65nF

Pin Count :

12

Turn On Time :

110 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

208W

IGBT Type :

NPT

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

UPPER

NTC Thermistor :

yes

Transistor Element Material :

SILICON

Package / Case :

SP1

Power - Max :

208W

Mounting Type :

Chassis Mount

Voltage - Collector Emitter Breakdown (Max) :

1200V