APT9F100S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

1000V

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2606pF @ 25V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

245

Published :

1997

Avalanche Energy Rating (Eas) :

574 mJ

JESD-609 Code :

e3

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

9A

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Mount :

Surface Mount

Continuous Drain Current (ID) :

9A

Case Connection :

DRAIN

Power Dissipation-Max :

337W Tc

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

37A

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Terminal Finish :

PURE MATTE TIN

Packaging :

Tube

Series :

POWER MOS 8™

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Terminations :

2