APT97N65LC6

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 2.96mA

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

97A

Mount :

Through Hole

Published :

1997

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

275 ns

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

97A Tc

Packaging :

Tube

Number of Terminations :

3

Package / Case :

TO-264-3, TO-264AA

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

41m Ω @ 48.5A, 10V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

22 Weeks

Transistor Element Material :

SILICON

Pin Count :

3

Drain to Source Voltage (Vdss) :

650V

Rise Time :

60ns

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

7650pF @ 25V

Fall Time (Typ) :

130 ns

Terminal Position :

Single

Power Dissipation-Max :

862W Tc

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Turn On Delay Time :

25 ns

DS Breakdown Voltage-Min :

650V

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN