APT75GN60LDQ3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

47ns/385ns

Gate-Emitter Voltage-Max :

30V

Mount :

Through Hole

Collector Emitter Saturation Voltage :

1.45V

Case Connection :

COLLECTOR

Turn-Off Delay Time :

385 ns

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 75A

Mounting Type :

Through Hole

Length :

26.49mm

Gate Charge :

485nC

Transistor Element Material :

SILICON

Max Collector Current :

155A

Additional Feature :

High Reliability

Weight :

10.6g

Pbfree Code :

yes

Packaging :

Tube

Pin Count :

3

Max Power Dissipation :

536W

Published :

1999

Package / Case :

TO-264-3, TO-264AA

Input Type :

Standard

JESD-30 Code :

R-PSFM-T3

Element Configuration :

Single

Turn On Delay Time :

47 ns

Collector Emitter Breakdown Voltage :

600V

Continuous Collector Current :

155A

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Factory Lead Time :

25 Weeks

Operating Temperature :

-55°C~175°C TJ

Current - Collector Pulsed (Icm) :

225A

Height :

5.21mm

Test Condition :

400V, 75A, 1 Ω, 15V

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Switching Energy :

2500μJ (on), 2140μJ (off)

Width :

20.5mm

Collector Emitter Voltage (VCEO) :

600V

Turn Off Time-Nom (toff) :

485 ns

Turn On Time :

95 ns

Terminal Finish :

TIN SILVER COPPER

Radiation Hardening :

No

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Thr Voltage-Max :

6.5V

IGBT Type :

Trench Field Stop

Transistor Application :

POWER CONTROL

Number of Terminations :

3