APT75GN60BG
- Mfr.Part #
- APT75GN60BG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 155A 536W TO247
- Stock
- 44,699
- In Stock :
- 44,699
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- ECCN Code :
- EAR99
- Max Collector Current :
- 155A
- Test Condition :
- 400V, 75A, 1 Ω, 15V
- Transistor Application :
- POWER CONTROL
- Polarity/Channel Type :
- N-Channel
- Gate Charge :
- 485nC
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 385 ns
- Packaging :
- Tube
- JESD-609 Code :
- e1
- Turn On Time :
- 95 ns
- Voltage - Rated DC :
- 600V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 3
- Max Power Dissipation :
- 536W
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Turn On Delay Time :
- 47 ns
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- IGBT Type :
- Trench Field Stop
- Current - Collector Pulsed (Icm) :
- 225A
- Input Type :
- Standard
- Lead Free :
- Lead Free
- Factory Lead Time :
- 24 Weeks
- Vce(on) (Max) @ Vge, Ic :
- 1.85V @ 15V, 75A
- Td (on/off) @ 25°C :
- 47ns/385ns
- Additional Feature :
- High Reliability
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 600V
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 600V
- Gate-Emitter Voltage-Max :
- 30V
- Number of Terminations :
- 3
- Current Rating :
- 155A
- Switching Energy :
- 2500μJ (on), 2140μJ (off)
- Turn Off Time-Nom (toff) :
- 485 ns
- JEDEC-95 Code :
- TO-247AD
- Datasheets
- APT75GN60BG

APT75GN60BG datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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