APT75GN60BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Test Condition :

400V, 75A, 1 Ω, 15V

Current - Collector Pulsed (Icm) :

225A

Transistor Application :

POWER CONTROL

JESD-609 Code :

e1

Max Collector Current :

155A

Factory Lead Time :

24 Weeks

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Gate-Emitter Thr Voltage-Max :

6.5V

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Max Power Dissipation :

536W

Current Rating :

155A

Switching Energy :

2500μJ (on), 2140μJ (off)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Element Configuration :

Single

Packaging :

Tube

Turn-Off Delay Time :

385 ns

Number of Elements :

1

Additional Feature :

High Reliability

Transistor Element Material :

SILICON

Input Type :

Standard

Turn On Delay Time :

47 ns

Mount :

Through Hole

JEDEC-95 Code :

TO-247AD

Voltage - Rated DC :

600V

Polarity/Channel Type :

N-Channel

IGBT Type :

Trench Field Stop

Gate Charge :

485nC

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

600V

Pin Count :

3

Collector Emitter Voltage (VCEO) :

600V

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 75A

Gate-Emitter Voltage-Max :

30V

Number of Terminations :

3

Turn Off Time-Nom (toff) :

485 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

Td (on/off) @ 25°C :

47ns/385ns

Turn On Time :

95 ns