APT75GN120LG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

RoHS Status :

RoHS Compliant

Voltage - Collector Emitter Breakdown (Max) :

1200V

Turn On Delay Time :

60 ns

Max Power Dissipation :

833W

Case Connection :

COLLECTOR

Turn-Off Delay Time :

620 ns

Length :

26.49mm

Turn Off Time-Nom (toff) :

925 ns

Current - Collector Pulsed (Icm) :

225A

Lead Free :

Lead Free

Mount :

Through Hole

Weight :

10.6g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Voltage-Max :

30V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

JESD-609 Code :

e1

Element Configuration :

Single

Input Type :

Standard

Published :

1999

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Packaging :

Tube

Collector Emitter Saturation Voltage :

1.7V

Continuous Collector Current :

200A

Radiation Hardening :

No

Width :

20.5mm

Height :

5.21mm

JESD-30 Code :

R-PSFM-T3

Collector Emitter Breakdown Voltage :

1.2kV

Package / Case :

TO-264-3, TO-264AA

Polarity/Channel Type :

N-Channel

Switching Energy :

8620μJ (on), 11400μJ (off)

Mounting Type :

Through Hole

Gate Charge :

425nC

Voltage - Rated DC :

1.2kV

Collector Emitter Voltage (VCEO) :

1.2kV

Turn On Time :

101 ns

Td (on/off) @ 25°C :

60ns/620ns

Transistor Application :

POWER CONTROL

IGBT Type :

Trench Field Stop

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

Number of Terminations :

3

Additional Feature :

High Reliability

Max Collector Current :

200A

Pbfree Code :

yes

Pin Count :

3

Gate-Emitter Thr Voltage-Max :

6.5V

Factory Lead Time :

24 Weeks

Test Condition :

800V, 75A, 1 Ω, 15V

Current Rating :

200A