APT75GN120B2G
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- Mfr.Part #
- APT75GN120B2G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- IGBT 1200V 200A 833W TMAX
- Stock
- 26,731
- In Stock ：
- 26,731
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Input Type :
- Standard
- Package / Case :
- TO-247-3 Variant
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- 1.2kV
- Number of Pins :
- 3
- Td (on/off) @ 25°C :
- 60ns/620ns
- Pbfree Code :
- yes
- Gate Charge :
- 425nC
- Test Condition :
- 800V, 75A, 1 Ω, 15V
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Transistor Application :
- POWER CONTROL
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- IGBT Type :
- Trench Field Stop
- Switching Energy :
- 8045μJ (on), 7640μJ (off)
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 75A
- Turn On Time :
- 101 ns
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Current Rating :
- 200A
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- High Reliability
- Mount :
- Through Hole
- Max Collector Current :
- 200A
- Current - Collector Pulsed (Icm) :
- 225A
- Radiation Hardening :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Power Dissipation :
- 833W
- Turn Off Time-Nom (toff) :
- 925 ns
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Datasheets
- APT75GN120B2G
APT75GN120B2G datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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