APT6M100K

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

225W Tc

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Current Rating :

5.8A

Turn On Delay Time :

6.4 ns

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Power Dissipation :

225W

Radiation Hardening :

No

Number of Elements :

1

Package / Case :

TO-220-3

Rise Time :

5.8ns

Pulsed Drain Current-Max (IDM) :

20A

Length :

10.26mm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 3A, 10V

Mounting Type :

Through Hole

Packaging :

Tube

Voltage - Rated DC :

1kV

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Continuous Drain Current (ID) :

6A

JESD-609 Code :

e1

Pin Count :

3

Drain to Source Voltage (Vdss) :

1000V

Pbfree Code :

yes

Published :

2006

Weight :

6.000006g

Height :

9.19mm

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Terminal Position :

Single

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Mount :

Through Hole

Fall Time (Typ) :

5.4 ns

Drain Current-Max (Abs) (ID) :

6A

Width :

4.72mm

Configuration :

Single

Turn-Off Delay Time :

22 ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1410pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Temperature :

-55°C~150°C TJ