APT66M60B2
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- Mfr.Part #
- APT66M60B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 70A T-MAX
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 13190pF @ 25V
- Packaging :
- Tube
- Rise Time :
- 85ns
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Height :
- 5.31mm
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Pure Matte Tin (Sn)
- Turn-Off Delay Time :
- 225 ns
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Vgs (Max) :
- ±30V
- Current Rating :
- 66A
- Package / Case :
- TO-247-3 Variant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Terminal Position :
- Single
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 245A
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Resistance :
- 90mOhm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 70A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 18 Weeks
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 33A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 600V
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 70 ns
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 75 ns
- Power Dissipation-Max :
- 1135W Tc
- Width :
- 16.26mm
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 600V
- Pin Count :
- 3
- Published :
- 1997
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 21.46mm
- Datasheets
- APT66M60B2
N-Channel Tube 100m Ω @ 33A, 10V ±30V 13190pF @ 25V 330nC @ 10V TO-247-3 Variant
APT66M60B2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 13190pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 225 ns.Peak drain current is 245A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 75 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT66M60B2 Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 225 ns
based on its rated peak drain current 245A.
APT66M60B2 Applications
There are a lot of Microsemi Corporation
APT66M60B2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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