APT66F60L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Turn On Delay Time :

75 ns

Pin Count :

3

Published :

1997

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipation-Max :

1135W Tc

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Packaging :

Tube

Vgs (Max) :

±30V

Turn-Off Delay Time :

225 ns

Pbfree Code :

yes

Fall Time (Typ) :

70 ns

Terminal Finish :

PURE MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Transistor Application :

SWITCHING

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Rise Time :

85ns

Drain to Source Voltage (Vdss) :

600V

Continuous Drain Current (ID) :

70A

Input Capacitance (Ciss) (Max) @ Vds :

13190pF @ 25V

Pulsed Drain Current-Max (IDM) :

245A

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Series :

POWER MOS 8™

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

90m Ω @ 33A, 10V

Drain Current-Max (Abs) (ID) :

66A

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Factory Lead Time :

22 Weeks

DS Breakdown Voltage-Min :

600V

Radiation Hardening :

No

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Package / Case :

TO-264-3, TO-264AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole