APT66F60L
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- Mfr.Part #
- APT66F60L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 70A TO264
- Stock
- 35,136
- In Stock ：
- 35,136
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 225 ns
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 600V
- DS Breakdown Voltage-Min :
- 600V
- Published :
- 1997
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Case Connection :
- DRAIN
- Package / Case :
- TO-264-3, TO-264AA
- Drain Current-Max (Abs) (ID) :
- 66A
- Series :
- POWER MOS 8™
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Packaging :
- Tube
- Factory Lead Time :
- 22 Weeks
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 33A, 10V
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 13190pF @ 25V
- Continuous Drain Current (ID) :
- 70A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Terminal Finish :
- PURE MATTE TIN
- Power Dissipation-Max :
- 1135W Tc
- JESD-609 Code :
- e3
- Rise Time :
- 85ns
- Pulsed Drain Current-Max (IDM) :
- 245A
- Mount :
- Through Hole
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Turn On Delay Time :
- 75 ns
- Fall Time (Typ) :
- 70 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- APT66F60L
N-Channel Tube 90m Ω @ 33A, 10V ±30V 13190pF @ 25V 330nC @ 10V 600V TO-264-3, TO-264AA
APT66F60L Overview
A device's maximum input capacitance is 13190pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 70A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 66A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 225 ns.Its maximum pulsed drain current is 245A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 75 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT66F60L Features
a continuous drain current (ID) of 70A
the turn-off delay time is 225 ns
based on its rated peak drain current 245A.
a 600V drain to source voltage (Vdss)
APT66F60L Applications
There are a lot of Microsemi Corporation
APT66F60L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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